17:30 〜 17:45

[D-6-06] Influence of Interface Traps on the Shape of Split C-V Curves of 4H-SiC MOSFETs at Inversion

〇Xiaoran Cui¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. of Tsukuba(Japan))

https://doi.org/10.7567/SSDM.2020.D-6-06