Effect of Thick Nitride Layer on The RF Performance in GaN HEMTs on 3C-SiC/Si

Arijit Bose

doi:https://doi.org/10.7567/SSDM.2020.D-7-02

9:15 AM - 9:30 AM

[D-7-02] Effect of Thick Nitride Layer on The RF Performance in GaN HEMTs on 3C-SiC/Si

〇Arijit Bose¹, Debaleen Biswas¹, Shigeomi Hishiki², Sumito Ouchi², Koichi Kitahara², Keisuke Kawamura², Akio Wakejima¹ (1. Nagoya Inst. of Tech.(Japan), 2. SIC Division, Air Water Inc.(Japan))

https://doi.org/10.7567/SSDM.2020.D-7-02

2020 International Conference on Solid State Devices and Materials

[D-7-02] Effect of Thick Nitride Layer on The RF Performance in GaN HEMTs on 3C-SiC/Si