Effect of the Gate Width Extension in Millimeter Scale on the RF Performance of Polycrystalline Diamond MOSFETs

Masakazu Arai

doi:https://doi.org/10.7567/SSDM.2020.D-7-03

09:30 〜 09:45

[D-7-03] Effect of the Gate Width Extension in Millimeter Scale on the RF Performance of Polycrystalline Diamond MOSFETs

〇Masakazu Arai¹, Ken Kudara¹, Shoichiro Imanishi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. School of Fundamental Sci. & Eng. Waseda Univ.(Japan), 2. Kagami Memorial Res. Inst. for Materials Sci. and Tech.(Japan))

https://doi.org/10.7567/SSDM.2020.D-7-03

2020 International Conference on Solid State Devices and Materials

[D-7-03] Effect of the Gate Width Extension in Millimeter Scale on the RF Performance of Polycrystalline Diamond MOSFETs