Effect of C- and Fe-doped GaN Buffer on AlGaN/GaN HEMT Performance on GaN Substrate Using Side-gate Modulation

10:15 〜 10:30

[D-7-06] Effect of C- and Fe-doped GaN Buffer on AlGaN/GaN HEMT Performance on GaN Substrate Using Side-gate Modulation

〇Maria Emma Villamin¹, Takaaki Kondo¹, Naotaka Iwata¹ (1. Toyota Tech. Inst.(Japan))