Analysis of Dependence of dV<sub>CE</sub>/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT

Yoko Iwakaji

doi:https://doi.org/10.7567/SSDM.2020.D-8-02

11:30 〜 11:45

[D-8-02] Analysis of Dependence of dV_CE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT

〇Yoko Iwakaji¹, Tomoko Matsudai¹, Tatsunori Sakano², Kazuto Takao² (1. Toshiba Electric Devices & Storage Corp.(Japan), 2. Corporate Research & Development Center, Toshiba Corp.(Japan))

https://doi.org/10.7567/SSDM.2020.D-8-02

2020 International Conference on Solid State Devices and Materials

[D-8-02] Analysis of Dependence of dVCE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT

[D-8-02] Analysis of Dependence of dV_CE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT