Dynamic characteristics of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN semiconductor distributed Bragg reflector

Toshihide Ide

doi:https://doi.org/10.7567/SSDM.2020.E-4-04

11:45 〜 12:00

[E-4-04] Dynamic characteristics of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN semiconductor distributed Bragg reflector

〇Toshihide Ide^1,2, Ryousuke Iida³, Tetsuya Takeuchi³, Xuelun Wang², Noriyuki Takada¹, Mitsuaki Shimizu² (1. National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan), 2. NU-AIST GaN Advanced Device Open Innovation Lab. (GaN-OIL) AIST(Japan), 3. Meijo Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.E-4-04

2020 International Conference on Solid State Devices and Materials

[E-4-04] Dynamic characteristics of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN semiconductor distributed Bragg reflector