16:15 〜 16:30

[F-2-02] Thickening of Al-induced Layer-exchanged Si_1-xGe_x Film for Improving Thermoelectric Output Power

〇Tomoki Ozawa¹, Kinta Kusano¹, Takashi Suemasu¹, Kaoru Toko^1,2 (1. Univ. of Tsukuba(Japan), 2. JST PRESTO(Japan))

https://doi.org/10.7567/SSDM.2020.F-2-02