16:15 〜 16:30

[G-10-02] Fabrication of AlGaN/GaN MOS HEMT-based high-sensitivity EGFET pH sen-sor with coplanar gate structure

〇Seong-Kun Cho¹, Won-Ju Cho¹ (1. Kwangwoon Univ.(Korea))

https://doi.org/10.7567/SSDM.2020.G-10-02