4:15 PM - 4:30 PM [G-10-02] Fabrication of AlGaN/GaN MOS HEMT-based high-sensitivity EGFET pH sen-sor with coplanar gate structure 〇Seong-Kun Cho1, Won-Ju Cho1 (1. Kwangwoon Univ.(Korea)) https://doi.org/10.7567/SSDM.2020.G-10-02
