Effect of Post-Deposition Annealing Temperature on H2S Sensing and Low-Frequency Noise Characteristics of In2O3 Gas Sensor

Wonjun Shin

doi:https://doi.org/10.7567/SSDM.2020.G-3-02

10:15 〜 10:30

[G-3-02] Effect of Post-Deposition Annealing Temperature on H₂S Sensing and Low-Frequency Noise Characteristics of In₂O₃ Gas Sensor

〇Wonjun Shin¹, Seongbin Hong¹, Yujeong Jeong¹, Gyeweon Jung¹, Jinwoo Park¹, Donghee Kim¹, Byung-Gook Park¹, Jong-Ho Lee¹ (1. Seoul National Univ.(Korea))

https://doi.org/10.7567/SSDM.2020.G-3-02

2020 International Conference on Solid State Devices and Materials

[G-3-02] Effect of Post-Deposition Annealing Temperature on H2S Sensing and Low-Frequency Noise Characteristics of In2O3 Gas Sensor

[G-3-02] Effect of Post-Deposition Annealing Temperature on H₂S Sensing and Low-Frequency Noise Characteristics of In₂O₃ Gas Sensor