Effect of the Addition of Soluble Fullerene Derivatives to the Charge Storage Layers of Solution-Processed Optical Organic Transistor Memories

Reitaro Hattori

doi:https://doi.org/10.7567/SSDM.2020.G-4-03

11:45 〜 12:00

[G-4-03] Effect of the Addition of Soluble Fullerene Derivatives to the Charge Storage Layers of Solution-Processed Optical Organic Transistor Memories

〇Reitaro Hattori¹, Takashi Nagase^1,2, Miho Higashinakaya¹, Shion Tazuhara¹, Takashi Kobayashi^1,2, Hiroyoshi Naito^1,2 (1. Osaka Pref. Univ.(Japan), 2. RIMED(Japan))

https://doi.org/10.7567/SSDM.2020.G-4-03

2020 International Conference on Solid State Devices and Materials

[G-4-03] Effect of the Addition of Soluble Fullerene Derivatives to the Charge Storage Layers of Solution-Processed Optical Organic Transistor Memories