Origin of Growth Direction Selectivity in CVD of h-BN/Graphene Heterostructure

Hiroyuki Kageshima

doi:https://doi.org/10.7567/SSDM.2020.H-1-05

15:15 〜 15:30

[H-1-05] Origin of Growth Direction Selectivity in CVD of h-BN/Graphene Heterostructure

〇Hiroyuki Kageshima¹, Shengnan Wang², Hiroki Hibino^2,3 (1. Shimane Univ.(Japan), 2. NTT Basic Research Labs., NTT Corp.(Japan), 3. Kwansei Gakuin Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.H-1-05

2020 International Conference on Solid State Devices and Materials

[H-1-05] Origin of Growth Direction Selectivity in CVD of h-BN/Graphene Heterostructure