The Japan Society of Applied Physics

16:30 〜 16:45

[H-10-02] Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes with 2.2 MV/W for Low Power Microwave Harvesting

〇Tsuyoshi Takahashi1,2, Kenichi Kawaguchi1,2, Masaru Sato1,2, Michihiko Suhara3, Naoya Okamoto1,2 (1. Fujitsu Laboratories Ltd.(Japan), 2. Fujitsu Ltd.(Japan), 3. Tokyo Metropolitan Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.H-10-02