Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes with 2.2 MV/W for Low Power Microwave Harvesting

Tsuyoshi Takahashi

doi:https://doi.org/10.7567/SSDM.2020.H-10-02

16:30 〜 16:45

[H-10-02] Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes with 2.2 MV/W for Low Power Microwave Harvesting

〇Tsuyoshi Takahashi^1,2, Kenichi Kawaguchi^1,2, Masaru Sato^1,2, Michihiko Suhara³, Naoya Okamoto^1,2 (1. Fujitsu Laboratories Ltd.(Japan), 2. Fujitsu Ltd.(Japan), 3. Tokyo Metropolitan Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.H-10-02

2020 International Conference on Solid State Devices and Materials

[H-10-02] Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes with 2.2 MV/W for Low Power Microwave Harvesting