Observation of charge carrier localization-induced negative magnetoresistance at room temperature in helium-ion-irradiated defective graphene

Takuya Iwasaki

doi:https://doi.org/10.7567/SSDM.2020.H-4-04

12:00 〜 12:15

[H-4-04] Observation of charge carrier localization-induced negative magnetoresistance at room temperature in helium-ion-irradiated defective graphene

〇Takuya Iwasaki¹, Shu Nakamura², Osazuwa Gabriel Agbonlahor², Manoharan Muruganathan², Masashi Akabori², Yoshifumi Morita³, Satoshi Moriyama¹, Shinichi Ogawa⁴, Yutaka Wakayama¹, Hiroshi Mizuta^2,5, Shu Nakaharai¹ (1. NIMS(Japan), 2. JAIST(Japan), 3. Gunma Univ.(Japan), 4. AIST(Japan), 5. Hitachi Camb. Lab.(UK))

https://doi.org/10.7567/SSDM.2020.H-4-04

2020 International Conference on Solid State Devices and Materials

[H-4-04] Observation of charge carrier localization-induced negative magnetoresistance at room temperature in helium-ion-irradiated defective graphene