Gate-Bias Assisted Humidity Sensor based on ReS<sub>2</sub> Field-Effect Transistors

Amir Zulkefli

doi:https://doi.org/10.7567/SSDM.2020.H-7-04

09:45 〜 10:00

[H-7-04] Gate-Bias Assisted Humidity Sensor based on ReS₂ Field-Effect Transistors

〇Amir Zulkefli^1,2, Bablu Mukherjee¹, Takuya Iwasaki^1,3, Ryoma Hayakawa¹, Shu Nakaharai¹, Yutaka Wakayama^1,2 (1. WPI-MANA, Nat'l Inst. for Mater. Sci. (NIMS)(Japan), 2. Kyushu Univ.(Japan), 3. ICYS, Nat'l Inst. for Mater. Sci. (NIMS)(Japan))

https://doi.org/10.7567/SSDM.2020.H-7-04

2020 International Conference on Solid State Devices and Materials

[H-7-04] Gate-Bias Assisted Humidity Sensor based on ReS2 Field-Effect Transistors

[H-7-04] Gate-Bias Assisted Humidity Sensor based on ReS₂ Field-Effect Transistors