14:45 〜 15:00

[I-1-03] Gate control of spin-orbit interaction in a nanowire gate-all-around FET with atomic-layer-deposited Al₂O₃/ZnO gate-stack

〇Keiko Takase¹, Kouta Tateno¹, Satoshi Sasaki¹ (1. NTT Basic Research Laboratories, NTT Corporation(Japan))

https://doi.org/10.7567/SSDM.2020.I-1-03