Gate control of spin-orbit interaction in a nanowire gate-all-around FET with atomic-layer-deposited Al<sub>2</sub>O<sub>3</sub>/ZnO gate-stack

2:45 PM - 3:00 PM

[I-1-03] Gate control of spin-orbit interaction in a nanowire gate-all-around FET with atomic-layer-deposited Al₂O₃/ZnO gate-stack

〇Keiko Takase¹, Kouta Tateno¹, Satoshi Sasaki¹ (1. NTT Basic Research Laboratories, NTT Corporation(Japan))