Spin Transport in Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors: Spin Drift Effect in the Inversion Channel and Spin Relaxation in the <em>n</em><sup>+</sup>-Si Source/Drain Regions

16:30 〜 16:45

[I-2-03] Spin Transport in Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors: Spin Drift Effect in the Inversion Channel and Spin Relaxation in the n⁺-Si Source/Drain Regions

〇Shoichi Sato^1,2, Shota Okamoto¹, Masaaki Tanaka^1,2, Ryosho Nakane¹ (1. Univ. of Tokyo, EEIS(Japan), 2. Univ. of Tokyo, CSRN(Japan))