4:30 PM - 4:45 PM

[J-2-03] Hydrogenated In–Ga–Zn–O Thin-Film-Transistors With An Anodize Al2O3 Gate Insulator
For Flexible Devices

〇Shuya Kono¹, Marin Mori¹, S G Mehadi Aman¹, Yusaku Magari^1,2, Norbert Fruehauf³, Mamoru Furuta^1,2 (1. Kochi Univ. of Tech. Material and Sci. and Eng. Course(Japan), 2. Kochi Univ. of Tech. Center for Nanotechnology(Japan), 3. Univ. of Stuttgart Inst. for Large Area Microelectronics (Germany))

https://doi.org/10.7567/SSDM.2020.J-2-03