Fabrication of Indium-Tin-Oxide Channel Ferroelectric-Gate Thin Film Transistors using Yttrium Doped Hafnium-Zirconium Dioxide by Chemical Solution Process.

16:45 〜 17:00

[J-2-04] Fabrication of Indium-Tin-Oxide Channel Ferroelectric-Gate Thin Film Transistors using Yttrium Doped Hafnium-Zirconium Dioxide by Chemical Solution Process.

〇Mohit -¹, Takaaki Miyasako², Eisuke Tokumitsu¹ (1. JAIST (Japan), 2. Murata Manufac. Co., Ltd(Japan))