The Use of a Patterned NiO Capping Layer to Improve Photoresponsivity of Ultraviolet Photodetectors Based on IGZO Field Effect Diodes&lt;gdiv&gt;&lt;/gdiv&gt;

Meng-Yung Su

doi:https://doi.org/10.7567/SSDM.2020.J-4-03

11:45 AM - 12:00 PM

[J-4-03] The Use of a Patterned NiO Capping Layer to Improve Photoresponsivity of Ultraviolet Photodetectors Based on IGZO Field Effect Diodes<gdiv></gdiv>

〇Meng-Yung Su¹, Shui-Jinn Wang¹, Rong-Ming Ko² (1. Inst. of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung University(Taiwan), 2. College of Electrical Engineering and Computer Science, National Cheng Kung University(Taiwan))

https://doi.org/10.7567/SSDM.2020.J-4-03

2020 International Conference on Solid State Devices and Materials

[J-4-03] The Use of a Patterned NiO Capping Layer to Improve Photoresponsivity of Ultraviolet Photodetectors Based on IGZO Field Effect Diodes<gdiv></gdiv>