Enhanced Electrical Performance and Reliability of Ti-SZTO Thin-Film Transistors with Hf1-xSixO2 Gate Dielectrics Using Co-sputtering Technique&lt;gdiv&gt;&lt;/gdiv&gt;

Chen-En Lin

doi:https://doi.org/10.7567/SSDM.2020.J-6-05

17:15 〜 17:30

[J-6-05] Enhanced Electrical Performance and Reliability of Ti-SZTO Thin-Film Transistors with Hf_1-xSi_xO₂ Gate Dielectrics Using Co-sputtering Technique<gdiv></gdiv>

〇Chen-En Lin¹, Shui-Jinn Wang¹, Rong-Ming Ko² (1. Inst. of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung University(Taiwan), 2. College of Electrical Engineering and Computer Science, National Cheng Kung University(Taiwan))

https://doi.org/10.7567/SSDM.2020.J-6-05

2020 International Conference on Solid State Devices and Materials

[J-6-05] Enhanced Electrical Performance and Reliability of Ti-SZTO Thin-Film Transistors with Hf1-xSixO2 Gate Dielectrics Using Co-sputtering Technique<gdiv></gdiv>

[J-6-05] Enhanced Electrical Performance and Reliability of Ti-SZTO Thin-Film Transistors with Hf_1-xSi_xO₂ Gate Dielectrics Using Co-sputtering Technique<gdiv></gdiv>