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[K-10-03] Growth of single orientation 3C-SiC applying anisotropic step etching on a 4H-SiC substrate

〇Hiroyuki Sazawa¹, Hirotaka Yamaguchi¹, Kazutoshi Kojima¹, Hajime Okumura¹, Hiroshi Yamaguchi¹ (1. AIST(Japan))

https://doi.org/10.7567/SSDM.2020.K-10-03