16:30 〜 16:45

[K-10-03] Growth of single orientation 3C-SiC applying anisotropic step etching on a 4H-SiC substrate

〇Hiroyuki Sazawa¹, Hirotaka Yamaguchi¹, Kazutoshi Kojima¹, Hajime Okumura¹, Hiroshi Yamaguchi¹ (1. AIST(Japan))

https://doi.org/10.7567/SSDM.2020.K-10-03