Effects of Post Deposition Annealing on the Solid-Phase Crystallization of Ge Leading to a Hole Mobility of 530 cm2 V−1 s−1 on Glass

16:15 〜 16:30

[K-2-02] Effects of Post Deposition Annealing on the Solid-Phase Crystallization of Ge Leading to a Hole Mobility of 530 cm² V⁻¹ s⁻¹ on Glass

〇Takuto Mizoguchi¹, Toshifumi Imajo¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba(Japan))