17:00 〜 17:15

[K-2-05] Low-Temperature Solid-Phase Crystallization Combined with a-Si Under-Layer for High Sn Concentration GeSn Film without Sn-Segregation

〇Yuta Tan¹, Daiki Tsuruta¹, Taizoh Sadoh¹ (1. Kyushu Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.K-2-05