The Japan Society of Applied Physics

5:00 PM - 5:15 PM

[K-2-05] Low-Temperature Solid-Phase Crystallization Combined with a-Si Under-Layer for High Sn Concentration GeSn Film without Sn-Segregation

〇Yuta Tan1, Daiki Tsuruta1, Taizoh Sadoh1 (1. Kyushu Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.K-2-05