impact of selective thermal etching in mixed H<sub>2</sub>/NH<sub>3</sub> atmosphere on crystal quality of N-polar AlGaN/GaN heterostructures

11:30 〜 11:45

[K-4-02] impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of N-polar AlGaN/GaN heterostructures

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1. NTT Device Technology Labs, NTT Corporation(Japan))