AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode

Iori Morita

doi:https://doi.org/10.7567/SSDM.2020.K-5-05

15:00 〜 15:15

[K-5-05 (Late News)] AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode

〇Iori Morita¹, Fumitaro Ishikawa¹, Anna Honda², Daiki Sato², Atsushi Koizumi², Tomohiro Nishitani^2,3, Masao Tabuchi⁴ (1. Univ. of Ehime.(Japan), 2. Photo electron Soul Inc.(Japan), 3. IMaSS of Nagoya Univ.(Japan), 4. SRC of Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.K-5-05

2020 International Conference on Solid State Devices and Materials

[K-5-05 (Late News)] AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode