A 0.7μm CMOS Image Sensor with 24,000e- FWC Using 1:4 Dual Conversion Gain Technology for High SNR Performance

Wonchul Choi

doi:https://doi.org/10.7567/SSDM.2020.L-10-04

4:45 PM - 5:00 PM

[L-10-04] A 0.7μm CMOS Image Sensor with 24,000e- FWC Using 1:4 Dual Conversion Gain Technology for High SNR Performance

〇Wonchul Choi¹, Hyeonseop Yoo¹, Heesang Kwon¹, Hyeongdong Jo¹, Jinhwa Han¹, Jooyeong Gong¹, Yujung Choi¹, Junho Seok¹, Hana Choi¹, Munhwan Kim¹, Ina Yun¹, Seoyun Park¹, Honghyun Jeon¹, Jongyoon Shin¹, Youngsun Oh¹, Donghyuk Park¹, Yitae Kim¹, Jungchak Ahn¹ (1. Samsung Electronics Co., Ltd(Korea))

https://doi.org/10.7567/SSDM.2020.L-10-04

2020 International Conference on Solid State Devices and Materials

[L-10-04] A 0.7μm CMOS Image Sensor with 24,000e- FWC Using 1:4 Dual Conversion Gain Technology for High SNR Performance