[OP] Opening Remarks (movie)

〇Atsushi Kurobe (General Chair,Organizing Committee)

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 8:45 AM - 8:50 AM

[OP] Opening Remarks (movie)

〇Mutsuko Hatano (President, The JapanSociety of Applied Physics)

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 8:50 AM - 8:55 AM

[PL-01 (Plenary)] How Fugaku became the first Exascale Machine, and how our Journey towards FugakuNeXT will Continue

〇Satoshi Matsuoka (RIKEN Center for Computational Science / Tokyo Institute of Technology)

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 9:00 AM - 9:45 AM |PDF Download

[PL-02 (Plenary)] A New Metric for Gauging Progress of Semiconductor Technology

〇H.-S. Philip Wong (TSMC / Stanford University)

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 9:50 AM - 10:35 AM |PDF Download

[PL-03 (Plenary)] Engineering qubits in silicon with atomic precision

〇Michelle Y. Simmons (Univ. of New South Wales/Silicon Quantum Computing Pty Ltd.)

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 10:40 AM - 11:25 AM |PDF Download

[PL-04 (Plenary)] Organic Electronics — Retrospective and Outlook

〇Ching W. Tang (Hong Kong Univ. of Science and Technology)

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 11:30 AM - 12:15 PM |PDF Download

[AW] Award Ceremony

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 12:20 PM - 12:45 PM

[A-1-01] Charging-induced stabilization of ferroelectric orthorhombic HfO₂ films:first-principles study on key growth conditions

〇Kazuaki Arai¹, Yuto Shiraishi¹, Riki Nagasawa¹, Masaaki Araidai², Kenji Shiraishi², Takasi Nakayama¹ (1. Chiba Univ.(Japan), 2. Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:00 PM - 2:15 PM |PDF Download

[A-1-02] Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO₂-Based Si FeFETs

〇Kasidit Toprasertpong¹, Kento Tahara¹, Taichiro Fukui¹, Zaoyang Lin¹, Kouhei Watanabe¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:15 PM - 2:30 PM |PDF Download

[A-1-03] Relationship between the Waking-up Effect and Structural Distortion in Ferroelectric HfO₂ characterized by X-ray Diffraction

〇Siri Nittayakasetwat Nittayakasetwat¹, Koji Kita¹ (1. Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:30 PM - 2:45 PM |PDF Download