[A-4-03] On-Wafer Electron Beam Detectors by Floating-Gate FinFET Technologies

Chih-An Yang¹, 〇Jiun Shi Wang¹, Jeng Burn Lin², Jung Chrong Lin¹, Chin Ya King¹ (1. Inst. of Electronics Engineering, National Tsing Hua Univ., Hsinchu(Taiwan), 2. Inst. of Photonics Technologies, National Tsing Hua Univ., Hsinchu(Taiwan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:45 AM - 12:00 PM |PDF Download

[A-4-04] On-Wafer Recorders for Assessing Wide Range Plasma Induced Charging Effect in FinFET Processes

Chi - Su¹, 〇Yi-Jie Chao¹, Chring-Jung Lin¹, Ya-Chin King¹ (1. National Tsing Hua Univ.(Taiwan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 12:00 PM - 12:15 PM |PDF Download

[A-4-05] White Spots Caused by Junction Leakage in Small Pixels of CMOS Image Sensor

〇Jeongjin Cho¹, Minji Jung¹, Taesub Jung¹, Masato Fujita¹, Kyungho Lee¹, Youjin Jung¹, Sungmin Ahn¹, Howoo Park², Dukseo Park², Younguk Song², Takashi Nagano¹, JungChak Ahn¹, Yongin Park¹ (1. System LSI Division, Samsung Electronics Co., Ltd(Korea), 2. Foundry Division, Samsung Electronics Co., Ltd(Korea))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 12:15 PM - 12:30 PM |PDF Download

[A-5-01 (Invited)] Towards extreme scaling of logic standard cells using Forksheet devices

〇Pieter Weckx¹ (1. imec(Belgium))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:00 PM - 2:30 PM |PDF Download

[A-5-02] This papar will be presented on Sept. 30 in Room A from 10:30 (after [A-7] session)

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:30 PM - 2:45 PM

[A-5-03] Evaluation of the impact of source/drain epi implementation on logic performance using combined process and circuit simulation

〇Assawer - Soussou¹, Tom - Schram², Kenichi - Miyaguchi², Ivan - Chakarov³, Bertrand - Parvais², Joseph - Ervin³ (1. COVENTOR(France), 2. IMEC(Belgium), 3. COVENTOR (US)(United States of America))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:45 PM - 3:00 PM |PDF Download

[A-5-04] Variability and Corner Effect of GAA p-Type Poly-Si JunctionlessNanowire/Nanosheet Transistors

〇Min-Ju Ahn¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1. Inst. of Indus. Sci., Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 3:00 PM - 3:15 PM |PDF Download

[A-5-05 (Late News)] TCAD Simulation of Phonon Thermal Transport in a Semiconductor Device

〇Junichi Hattori¹, Tsutomu Ikegami¹, Koichi Fukuda¹ (1. AIST(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 3:15 PM - 3:30 PM |PDF Download

[A-6-01 (Invited)] Metal-Assisted Solid Phase Crystallization of Vertical Si Channel in 3D Flash Memory

〇Hidenori Miyagawa¹, Haruka Kusai¹, Riichiro Takaishi¹, Tomoya Kawai¹, Yuuichi Kamimuta¹, Toshiya Murakami¹, Keiko Ariyoshi¹, Takanori Asano¹, Masakazu Goto¹, Makoto Fujiwara¹, Yuichiro Mitani¹, Tomoyuki Obu², Hideaki Aochi¹ (1. Kioxia Corp.(Japan), 2. Western Digital Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 4:00 PM - 4:30 PM |PDF Download

[A-6-02] Origin of Fermi Level De-Pinning of Metal Silicide, Rare-earth arsenide, TiN and Bi
Schottky Barriers

〇John Robertson¹, Zhaofu Zhang¹, Yuzheng Guo² (1. Cambridge Univ.(UK), 2. Swansea Univ.(UK))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 4:30 PM - 4:45 PM |PDF Download