[D-10-02] Novel Enhancement-Mode Tri-Gate InAlN/GaN Tunnel-Junction HEMT

〇Yi-Ping Huang¹, Ching-Sung Lee², Wei-Chou Hsu¹ (1. National Cheng Kung Univ.(Taiwan), 2. Feng Chia Univ.(Taiwan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:30 PM - 4:45 PM |PDF Download

[D-10-03] Zn-doped GaN Mesa Structure as a Gate for Normally-off AlGaN/GaN-HFET

〇Norikazu Ito¹, Taketoshi Tanaka¹, Ken Nakahara¹ (1. Rohm Co.,Ltd(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:45 PM - 5:00 PM |PDF Download

[D-10-04] Large-Diameter 3C-SiC/Si Hetero-Epitaxial Substrates and Thick, High-Quality GaN Epitaxial Layers Grown on These Substrates for GaN Power Applications

〇Keisuke Kawamura¹, Shigeomi Hishiki¹, Hiroki Uratani¹, Sumito Ouchi¹, Hiroki Suzuki¹, Yoshiki Sakaida¹, Koichi Kitahara¹, Hirokazu Goto¹, Ichiro Hide¹, Shuichi Kaneko², Osamu Machida², Toru Yoshie² (1. Air Water Inc.(Japan), 2. Sanken Electric Co., LTD(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 5:00 PM - 5:15 PM |PDF Download

[D-10-05] Temperature Dependence of Local Electronic Properties of N-type GaN Crystals by Micro-Raman Imaging and Dielectric Dispersion at High Temperatures

〇Motoki Kawase¹, Jun Suda¹ (1. Chukyo Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 5:15 PM - 5:30 PM |PDF Download

[D-10-06] Bayesian optimization and expected hyper volume improvement for SiO₂/GaN capacitor

Shota Terai¹, 〇Mutsunori Uenuma¹, Tomoyuki Miyao¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1. Nara Institute of Science and Technology(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 5:30 PM - 5:45 PM |PDF Download

[D-10-07 (Late News)] Normally-off Recessed-gate ZrO₂/AlGaN/GaN MIS-HEMTs with Regrown AlGaN Barrier

〇Itsuki Nagase¹, Joel Tacla Asubar¹, Rui Shan Low¹, Shun Urano¹, Hirokuni Tokuda¹, Akio Yamamoto¹, Masaaki Kuzuhara² (1. University of Fukui(Japan), 2. Kwansei Gakuin University(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 5:45 PM - 6:00 PM |PDF Download

[D-2-01 (Invited)] Vertical GaN Power Device -Expectation and Challenges-

〇Tetsu Kachi¹ (1. Nagoya Universtiy(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 4:00 PM - 4:30 PM |PDF Download

[D-2-02] Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment

〇Takashi Ishida^1,2, Kyung Pil Nam¹, Maciej Matys¹, Tsutomu Uesugi¹, Jun Suda¹, Tetsu Kachi¹ (1. Nagoya Univ.(Japan), 2. MIRISE Technologies Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 4:30 PM - 4:45 PM |PDF Download

[D-2-03] A High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High-Energy Fluorine Ion Implanted Guard Rings

〇Ruiyuan Yin¹, Chiachia Li¹, Bin Zhang¹, Jinyan Wang¹, Yunyi Fu¹, Cheng Paul Wen¹, YiLong Hao¹, Bo Shen², Maojun Wang¹ (1. Inst. of Microelectronics, Peking Univ.(China), 2. School of Physics, Peking Univ.(China))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 4:45 PM - 5:00 PM |PDF Download

[D-2-04] On-resistance and Breakdown-Phenomenon Dependences on Threading Dislocations in Vertical p-n Junction Diodes

〇Hiroshi - Ohta¹, Naomi - Asai¹, Fumimasa - Horikiri², Yoshinobu - Narita², Takehiro - Yoshida², Tomoyoshi - Mishima¹ (1. Hosei Univ.(Japan), 2. SCIOCS Co., Ltd.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 5:00 PM - 5:15 PM |PDF Download