[K-10-04] Crystal Growth and Characterization of Topological Insulator BiSb Thin Films by Sputtering Deposition for SOT-MRAM Applications

〇Fan Tuo¹, Mustafa Tobah², Takanori Shirokura¹, Khang Nguyen^1,3, Nam Hai Pham^1,4,5 (1. Tokyo Inst. of Tech.(Japan), 2. Univ. of Illinois, UC(United States of America), 3. Ho Chi Minh City Univ. Of Edu.(Viet Nam), 4. Univ. of Tokyo(Japan), 5. JST CREST(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:45 PM - 5:00 PM |PDF Download

[K-10-05] Rapid annealing of metal thin films by micron chevron-shaped laser beam scanning

〇Anh Hoang Pham^1,3, Naruki Fukunaga², Wenchang Yeh^1,3, Shigekazu Morito^1,3, Takuya Ohba³ (1. Department of Physics and Materials Science, Shimane University(Japan), 2. Graduate School of Science and Technology, Shimane University(Japan), 3. Next Generation TATARA Co-creation Centre, Shimane University(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 5:00 PM - 5:15 PM |PDF Download

[K-10-06] Ar/N₂ gas flow ratio dependence on the high-k LaB_xN_y thin film characteristics formed by RF sputtering

〇Kyung Eun Park¹, Hideki Kamata¹, Shun-ichiro Ohmi¹ (1. Tokyo Tech.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 5:15 PM - 5:30 PM |PDF Download

[K-10-07] Crucial impact of hydrophobicity on the self-assembly of 2D colloidal crystals using Langmuir-Blodgett method

〇Heping Wu¹, Wei Ren¹, Luyue Jiang¹, Owen Liang², Jinyan Zhao¹, Yangyang Liu¹, Ya-Hong Xie², Gang Niu¹ (1. Xi'an Jiaotong Univ.(China), 2. Univ. of California, Los Angeles(United States of America))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 5:30 PM - 5:45 PM |PDF Download

[K-10-08 (Late News)] Withdrawn

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 5:45 PM - 6:00 PM |PDF Download

[K-10-09 (Late News)] Ionic Liquids-loaded Metal-Organic Frameworks System towards the Application for Nanoionic Devices

〇Sang-Gyu Koh¹, Taiki Koide¹, Takumi Morita¹, kentaro Kinoshita¹ (1. Tokyo Univ. of Sci.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 6:00 PM - 6:15 PM |PDF Download

[K-2-01] High Hole-mobility (690 cm²V^-1s^-1) Flexible Polycrystalline Ge Thin Films

〇Toshifumi Imajo^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba(Japan), 2. JSPS Research Fellow(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 4:00 PM - 4:15 PM |PDF Download

[K-2-02] Effects of Post Deposition Annealing on the Solid-Phase Crystallization of Ge Leading to a Hole Mobility of 530 cm² V⁻¹ s⁻¹ on Glass

〇Takuto Mizoguchi¹, Toshifumi Imajo¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 4:15 PM - 4:30 PM |PDF Download

[K-2-03] Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure

〇Akio Ohta¹, Kenzou Yamada¹, Hibiki Sugawa¹, Noriyuki Taoka¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 4:30 PM - 4:45 PM |PDF Download

[K-2-04] Low-Temperature Solid-Phase Crystallization of SiSn on Insulator - Effects of Sn Concentration and Film Thickness -

〇Tomohiro Kosugi¹, Kazuki Yagi¹, Taizoh Sadoh¹ (1. Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 4:45 PM - 5:00 PM |PDF Download