2020 International Conference on Solid State Devices and Materials

Sep 27, 2020 - Sep 30, 2020

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415 results (31 - 40)

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[A-6-03] Fermi-level Depinning of Metal-n-Ge by Carbon Nanotube Film Insertion

Yuning Wei^1,2, Xuqi Yang^1,2, Jianwei Zhang^3,4, Chang Liu^1,2, 〇Chi Liu¹, Dongming Sun^1,2 (1. Inst. Metal Research, CAS(China), 2. Univ. Science and Technology of China(China), 3. Changchun Inst. Optics, Fine Mechanics and Physics, CAS(China), 4. Univ. CAS(China))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 4:45 PM - 5:00 PM |PDF Download

[A-6-04] Chemical Structure of SiN Films Deposited on High Aspect Trench by Plasma Enhanced Atomic Layer Deposition

〇Tappei Nishihara¹, Ryo Yokogawa^1,2, Yuji Otsuki³, Munehito Kagaya³, Atsushi Ogura^2,1 (1. Meiji Univ.(Japan), 2. Meiji Renewable Energy Lab.(Japan), 3. Tokyo Electron Technology Solutions Ltd.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 5:00 PM - 5:15 PM |PDF Download

[A-6-05] Millisecond Post Deposition Annealing for Improving the EOT and D_it in TiN/HfO₂/SiO₂/Si Gate Stacks using Flash Lamp Annealing

〇Hikaru Kawarazaki¹, Akitsugu Ueda¹, Shinichi Kato¹, Kento Izumi², Yasuo Nara² (1. SCREEN Semiconductor Solutions Co., Ltd.(Japan), 2. Univ. of Hyogo(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 5:15 PM - 5:30 PM |PDF Download

[A-6-06] ON current enhancement and single-electron transport in tunnel FETs by a new isoelectronic trap impurity of beryllium

〇Yoshisuke Ban¹, Kimihiko Kato², Shota Iizuka², Satoshi Moriyama³, Koji Ishibashi¹, Keiji Ono¹, Takahiro Mori² (1. RIKEN(Japan), 2. AIST(Japan), 3. Tokyo Denki Univ. (TDU)(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 5:30 PM - 5:45 PM |PDF Download

[A-7-01 (Invited)] Circuit and Package Co-design for 3D Integration

〇Tadahiro Kuroda¹ (1. Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 9:30 AM - 10:00 AM |PDF Download

[A-7-02] A Self-Bias NAND Gate and its Application to Non-Overlapping Clock Generator for Extremely Low-Voltage CMOS LSIs

〇Hikaru Sebe¹, Kaori Matsumoto², Ryo Matsuzuka¹, Osamu Maida¹, Daisuke Kanemoto¹, Tetsuya Hirose¹ (1. Osaka Univ.(Japan), 2. Kobe Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 10:00 AM - 10:15 AM |PDF Download

[A-7-03] Nonvolatile SRAMs Enabled by Hysteretic Negative-Capacitance FETs- A Comparative Study of Novel 9T and 8T nvSRAMs

〇Yi Jui Wu¹, Wei Xiang You¹, Pin Su¹ (1. National Chiao Tung University(Taiwan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 10:15 AM - 10:30 AM |PDF Download

[A-5-02] A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond

〇Bingqi Sun¹, Qingpeng Wang², Shaofeng Yu¹ (1. Fudan University(China), 2. Coventor, LamResearch Company(United States of America))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 10:30 AM - 10:45 AM |PDF Download

[B-10-01] Sidewall Erased Multiple-Time Programmable Memory Cells in FinFET Technologies

〇Chun-Yu - Chuang¹, Chrong-Jung - Lin¹, Ya-Chin - King¹ (1. National Tsing Hua Univ.(Taiwan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:00 PM - 4:15 PM |PDF Download

[B-10-02] HfN Multi Charge Trapping Layers for Hf-based MONOS Nonvolatile Memory

〇Shun-ichiro Ohmi¹, Yusuke Horiuchi¹, Hiroki Morita¹, Akio Ihara¹, Jooyoung Pyo¹ (1. Tokyo Tech(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:15 PM - 4:30 PM |PDF Download

415 results (31 - 40)

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