[D-6-05] Comparison of Field Effect Mobility Enhancement by Different Oxidation Processes at 4H-SiC a-face MOS Interface

〇Mitsuru Sometani¹, Hirohisa Hirai¹, Mitsuo Okamoto¹, Tetsuo Hatakeyama^1,2, Shinsuke Harada¹, Hajime Okumura¹, Hiroshi Yamaguchi¹ (1. AIST(Japan), 2. Toyama Pref. Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 17:15 〜 17:30 |PDF ダウンロード

[D-6-06] Influence of Interface Traps on the Shape of Split C-V Curves of 4H-SiC MOSFETs at Inversion

〇Xiaoran Cui¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. of Tsukuba(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 17:30 〜 17:45 |PDF ダウンロード

[D-7-01] Large Signal Results at 6 GHz and record ft/fmax for AlN/GaN/AlN HEMTs

〇Austin Hickman¹, Reet Chaudhuri¹, Lei Li¹, Kazuki Nomoto¹, James Hwang², Huili Xing^1,2,4, Debdeep Jena^1,2,3,4 (1. School of Electrical and Computer Engineering, Cornell University(United States of America), 2. Department of Material Science and Engineering, Cornell University(United States of America), 3. School of Applied and Engineering Physics, Cornell University(United States of America), 4. Kavli Institute, Cornell University(United States of America))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 09:00 〜 09:15 |PDF ダウンロード

[D-7-02] Effect of Thick Nitride Layer on The RF Performance in GaN HEMTs on 3C-SiC/Si

〇Arijit Bose¹, Debaleen Biswas¹, Shigeomi Hishiki², Sumito Ouchi², Koichi Kitahara², Keisuke Kawamura², Akio Wakejima¹ (1. Nagoya Inst. of Tech.(Japan), 2. SIC Division, Air Water Inc.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 09:15 〜 09:30 |PDF ダウンロード

[D-7-03] Effect of the Gate Width Extension in Millimeter Scale on the RF Performance of Polycrystalline Diamond MOSFETs

〇Masakazu Arai¹, Ken Kudara¹, Shoichiro Imanishi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. School of Fundamental Sci. & Eng. Waseda Univ.(Japan), 2. Kagami Memorial Res. Inst. for Materials Sci. and Tech.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 09:30 〜 09:45 |PDF ダウンロード

[D-7-04] GaN Schottky Barrier Diodes for Microwave Rectification with Enhanced Cut-off Frequency

〇YiRun Zhong¹, Yang Li^1,2, Taofei Pu¹, Shigeki Fujiwara¹, Hiroshi Kitahata¹, Jin-Ping Ao¹ (1. Univ. of tokushima(Japan), 2. Univ. of xidian(China))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 09:45 〜 10:00 |PDF ダウンロード

[D-7-05] Electron Transport Modeling of GaN-based HEMT's by Poisson-Schrodinger Cellular-Automaton Coupled Approach

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Junya Yaita², Junji Kotani² (1. AIST(Japan), 2. Fujistu(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 10:00 〜 10:15 |PDF ダウンロード

[D-7-06] Effect of C- and Fe-doped GaN Buffer on AlGaN/GaN HEMT Performance on GaN Substrate Using Side-gate Modulation

〇Maria Emma Villamin¹, Takaaki Kondo¹, Naotaka Iwata¹ (1. Toyota Tech. Inst.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 10:15 〜 10:30 |PDF ダウンロード

[D-8-01 (Invited)] Innovative Silicon (i-Si) Power Device with Time-Spatial Carrier Control

〇Tomoyuki Miyoshi¹, Tomoyasu Furukawa¹, Masaki Shiraishi², Mutsuhiro Mori² (1. Research & Development Group, Hitachi, Ltd.(Japan), 2. Hitachi Power Semiconductor Device Ltd.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 11:00 〜 11:30 |PDF ダウンロード

[D-8-02] Analysis of Dependence of dV_CE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT

〇Yoko Iwakaji¹, Tomoko Matsudai¹, Tatsunori Sakano², Kazuto Takao² (1. Toshiba Electric Devices & Storage Corp.(Japan), 2. Corporate Research & Development Center, Toshiba Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 11:30 〜 11:45 |PDF ダウンロード