[H-3-06 (Late News)] 2-inch wafer sized GaAs nanowire ensembles on Sigrown by self-assisted molecular beam epitaxy

〇KENTA SAKAGUCHI -¹, Rikuo Tsutsumi -¹, Tomoki Ohno -¹, Mitsuki Yukimune -¹, Fumitaro Ishikawa -¹ (1. Ehime Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 10:15 AM - 10:30 AM |PDF Download

[H-4-01 (Invited)] Spin-Orbit Interaction in a Hole Nanowire and its Applications for Hybrid Quantum Systems

〇Rui Wang^1,3, Jian Sun^2,3, Russell S. Deacon³, Koji Ishibashi³ (1. Tokyo Univ. of Sci.(Japan), 2. Central South Univ.(China), 3. Advanced Device Lab., RIKEN(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:00 AM - 11:30 AM |PDF Download

[H-4-02] Electron-spin dynamics in tunnel-coupled structures of InGaAs well and dot with different p-doping concentrations applied with electric field

〇Soyoung Park¹, Hang Chen¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:30 AM - 11:45 AM |PDF Download

[H-4-03] Double Nuclear Spin Switching in Single Self-assembled Quantum Dots

〇Sota Yamamoto¹, Reina Kaji¹, Hirotaka Sasakura¹, Satoru Adachi¹ (1. Hokkaido Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:45 AM - 12:00 PM |PDF Download

[H-4-04] Observation of charge carrier localization-induced negative magnetoresistance at room temperature in helium-ion-irradiated defective graphene

〇Takuya Iwasaki¹, Shu Nakamura², Osazuwa Gabriel Agbonlahor², Manoharan Muruganathan², Masashi Akabori², Yoshifumi Morita³, Satoshi Moriyama¹, Shinichi Ogawa⁴, Yutaka Wakayama¹, Hiroshi Mizuta^2,5, Shu Nakaharai¹ (1. NIMS(Japan), 2. JAIST(Japan), 3. Gunma Univ.(Japan), 4. AIST(Japan), 5. Hitachi Camb. Lab.(UK))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 12:00 PM - 12:15 PM |PDF Download

[H-4-05 (Late News)] Magnetic Domain Structures Controlled by Patterned CoFe Nanolayer Thickness on GaAs (001) Substrates

〇Wei Dai¹, Keigo Teramoto¹, Ryoma horiguchi¹, Wataru Kanetsuka², Masashi Akabori², Shinjiro Hara¹ (1. Hokkaido Univ.(Japan), 2. Japan Advanced Institute of Science and Technology(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 12:15 PM - 12:30 PM |PDF Download

[H-5-01] Nano-scale characterization of few-layer hexagonal boron nitride with scattering-type scanning near-field optical microscopy

〇Makoto Takamura¹, Yoshitaka Taniyasu¹ (1. NTT Corp., NTT Basic Res. Labs.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:00 PM - 2:15 PM |PDF Download

[H-5-02] Hexagonal boron nitride as an ideal substrate for carbon nanotube photonics

〇Nan Fang^1,2, Keigo Otsuka¹, Takashi Taniguchi³, Kenji Watanabe³, Kosuke Nagashio⁴, Yuichiro K. Kato^1,2 (1. RIKEN CPR(Japan), 2. RIKEN RAP(Japan), 3. NIMS(Japan), 4. Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:15 PM - 2:30 PM |PDF Download

[H-5-03] Correlation between Structure and Luminescence of InAs SML Nanostructures

〇Ronel Christian Intal Roca¹, Itaru Kamiya¹ (1. Toyota Tech. Inst.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:30 PM - 2:45 PM |PDF Download

[H-5-04] Effects of Zinc doping on the optical and electrical properties of SnS2

〇Wei-Chan Tseng¹, Der-Yuh Lin¹, Yu-Tai Shih¹, Yu-Cheng Li¹, Chia Feng Lin² (1. National Changhua of Education Univ.(Taiwan), 2. National Chung Hsing Univ.(Taiwan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:45 PM - 3:00 PM |PDF Download