Characterization of Sub-threshold Swing of Si n-MOSFETs over a Temperature Range of 4 K to 300 K

14:37 〜 14:44

[A-1-03] Characterization of Sub-threshold Swing of Si n-MOSFETs over a Temperature Range of 4 K to 300 K

〇Min-Soo Kang¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.The Univ. of Tokyo)