The Japan Society of Applied Physics

14:44 〜 14:51

[A-1-04] Effect of Gate Stack Material on Performance and Low-frequency Noise in Si p-MOSFETs at Cryogenic Temperature: Comparison of SiO2/Poly-Si Gate and High-k/Metal Gate

〇Hiroshi Oka1、Takumi Inaba1、Ryo Hashimoto1、Takahiro Mori1 (1.AIST)

https://doi.org/10.7567/SSDM.2021.A-1-04