The Japan Society of Applied Physics

2:44 PM - 2:51 PM

[A-1-04] Effect of Gate Stack Material on Performance and Low-frequency Noise in Si p-MOSFETs at Cryogenic Temperature: Comparison of SiO2/Poly-Si Gate and High-k/Metal Gate

〇Hiroshi Oka1, Takumi Inaba1, Ryo Hashimoto1, Takahiro Mori1 (1.AIST)

https://doi.org/10.7567/SSDM.2021.A-1-04