Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al2O3/Y2O3 as gate dielectrics

Lawrence Boyu Young, Jun Liu, Yen-Hsun Glen Lin, Hsien-Wen Wan, Jueinai Kwo, Minghwei Hong

doi:https://doi.org/10.7567/SSDM.2021.A-1-05

2:51 PM - 2:58 PM

[A-1-05] Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al₂O₃/Y₂O₃ as gate dielectrics

〇Lawrence Boyu Young¹, Jun Liu¹, Yen-Hsun Glen Lin¹, Hsien-Wen Wan¹, Jueinai Kwo², Minghwei Hong¹ (1.National Taiwan Univ., 2.National Tsing Hua Univ.)

https://doi.org/10.7567/SSDM.2021.A-1-05

2021 International Conference on Solid State Devices and Materials

[A-1-05] Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al2O3/Y2O3 as gate dielectrics

[A-1-05] Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al₂O₃/Y₂O₃ as gate dielectrics