Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al2O3/Y2O3 as gate dielectrics

14:51 〜 14:58

[A-1-05] Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al₂O₃/Y₂O₃ as gate dielectrics

〇Lawrence Boyu Young¹、Jun Liu¹、Yen-Hsun Glen Lin¹、Hsien-Wen Wan¹、Jueinai Kwo²、Minghwei Hong¹ (1.National Taiwan Univ.、2.National Tsing Hua Univ.)