Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature

11:15 AM - 11:22 AM

[A-4-02] Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature

〇Xueyang Han¹, ChiaTsong Chen¹, Cheol-Min Lim¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)