Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature

11:15 〜 11:22

[A-4-02] Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature

〇Xueyang Han¹、ChiaTsong Chen¹、Cheol-Min Lim¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo)