11:22 〜 11:29

[A-4-03] Anisotropic Strain States in Extremely-Thin Body Ge-on-Insulator p-type MOSFET Observed by Oil-Immersion Raman Spectroscopy

〇Ryo Yokogawa^1,2、Chia-Tsong Chen³、Kasidit Toprasertpong³、Mitsuru Takenaka³、Shinichi Takagi³、Atsushi Ogura^1,2 (1.Meiji Univ.、2.MREL、3.Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2021.A-4-03