Anisotropic Strain States in Extremely-Thin Body Ge-on-Insulator p-type MOSFET Observed by Oil-Immersion Raman Spectroscopy

Ryo Yokogawa, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi, Atsushi Ogura

doi:https://doi.org/10.7567/SSDM.2021.A-4-03

11:22 AM - 11:29 AM

[A-4-03] Anisotropic Strain States in Extremely-Thin Body Ge-on-Insulator p-type MOSFET Observed by Oil-Immersion Raman Spectroscopy

〇Ryo Yokogawa^1,2, Chia-Tsong Chen³, Kasidit Toprasertpong³, Mitsuru Takenaka³, Shinichi Takagi³, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2021.A-4-03

2021 International Conference on Solid State Devices and Materials

[A-4-03] Anisotropic Strain States in Extremely-Thin Body Ge-on-Insulator p-type MOSFET Observed by Oil-Immersion Raman Spectroscopy