Electron Mobility Enhancement in n-GeSn Epitaxial Layers by Tensile Strain

Kai-Ying Tien

doi:https://doi.org/10.7567/SSDM.2021.A-4-06

12:06 〜 12:13

[A-4-06] Electron Mobility Enhancement in n-GeSn Epitaxial Layers by Tensile Strain

〇Kai-Ying Tien¹、Chia-You Liu¹、Po-Yuan Chiu¹、Yen Chuang¹、Hsiang-Shun Kao¹、Jiun-Yun Li^1,2,3 (1.Graduate Inst. of Electronics Eng., National Taiwan Univ.、2.Department of Electrical Eng., National Taiwan Univ.、3.Taiwan Semiconductor Res. Inst.)

https://doi.org/10.7567/SSDM.2021.A-4-06

2021 International Conference on Solid State Devices and Materials

[A-4-06] Electron Mobility Enhancement in n-GeSn Epitaxial Layers by Tensile Strain