12:06 PM - 12:13 PM

[A-4-06] Electron Mobility Enhancement in n-GeSn Epitaxial Layers by Tensile Strain

〇Kai-Ying Tien¹, Chia-You Liu¹, Po-Yuan Chiu¹, Yen Chuang¹, Hsiang-Shun Kao¹, Jiun-Yun Li^1,2,3 (1.Graduate Inst. of Electronics Eng., National Taiwan Univ., 2.Department of Electrical Eng., National Taiwan Univ., 3.Taiwan Semiconductor Res. Inst.)

https://doi.org/10.7567/SSDM.2021.A-4-06