In-situ Deposited HfO2 and Y2O3 on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties

Tien Yu Chu

doi:https://doi.org/10.7567/SSDM.2021.A-4-07

12:13 〜 12:20

[A-4-07] In-situ Deposited HfO₂and Y₂O₃ on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties

〇Tien Yu Chu¹、Hsien Wen Wan¹、Yi Ting Cheng¹、Chao Kai Cheng ¹、Yu Jie Hong¹、Jueinai Kwo²、Minghwei Hong Hong¹ (1.Granduate Institute of Applied Physics and Department of Physics, National Taiwan Univ., Taipei 10617、2.Department of Physics, National Tsing Hua Univ., Hsinchu 30013)

https://doi.org/10.7567/SSDM.2021.A-4-07

2021 International Conference on Solid State Devices and Materials

[A-4-07] In-situ Deposited HfO2 and Y2O3 on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties

[A-4-07] In-situ Deposited HfO₂and Y₂O₃ on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties